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Datasheet: Z0410MF1AA2 (STMicroelectronics)

4A TRIACS

 

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STMicroelectronics
1/6
Z04 Series
STANDARD
4A TRIAC
S
July 2003 - Ed: 5
MAIN FEATURES:
DESCRIPTION
The Z04 series is suitable for general purpose AC
switching applications. They can be found in
applications such as touch light dimmers, fan
controllers, HID lamp ignitors,...
Different gate current sensitivities are available,
allowing optimized performances when controlled
directly from microcontrollers.
Symbol
Value
Unit
I
T(RMS)
4
A
V
DRM
/V
RRM
600 to 800
V
I
GT (Q
1
)
3 to 25
mA
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
TI = 30C
4
A
Tamb = 25C
1
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25C)
F = 50 Hz
t = 20 ms
20
A
F = 60 Hz
t = 16.7 ms
21
I
t
I
t Value for fusing
tp = 10 ms
2.2
A
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100 ns
F = 120 Hz
Tj = 125C
20
A/s
I
GM
Peak gate current
tp = 20 s
Tj = 125C
1.2
A
P
G(AV)
Average gate power dissipation
Tj = 125C
0.2
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
G
A2
A1
A2
A1
G
TO202-3
(Z04xxF)
Z04 Series
2/6
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
STATIC CHARACTERISTICS
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol
Test Conditions
Quadrant
Z04xx
Unit
02
05
09
10
I
GT
(1)
V
D
= 12 V R
L
= 30
ALL
MAX.
3
5
10
25
mA
V
GT
ALL
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125C
ALL
MIN.
0.2
V
I
H
(2)
I
T
= 50 mA
MAX.
3
5
10
25
mA
I
L
I
G
= 1.2 I
GT
I - III - IV
MAX.
6
10
15
25
mA
II
12
15
25
50
dV/dt (2)
V
D
= 67 %V
DRM
gate open Tj = 110C
MIN.
10
20
100
200
V/s
(dV/dt)c (2)
(dI/dt)c = 1.8 A/ms
Tj = 110C
MIN.
0.5
1
2
5
V/s
Symbol
Test Conditions
Value
Unit
V
TM
(2)
I
TM
= 5.5 A tp = 380 s
Tj = 25C
MAX.
2.0
V
V
to
(2)
Threshold voltage
Tj = 125C
MAX.
0.95
V
R
d
(2)
Dynamic resistance
Tj = 125C
MAX.
180
m
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25C
MAX.
5
A
Tj = 125C
0.5
mA
Symbol
Parameter
Value
Unit
R
th(j-l)
Junction to lead (AC)
15
C/W
R
th(j-a)
Junction to ambient
100
C/W
Z04 Series
3/6
PRODUCT SELECTOR
ORDERING INFORMATION
OTHER INFORMATION
Note: xx = sensitivity, y = voltage
Part Number
Voltage
Sensitivity
Type
Package
600 V
700 V
800 V
Z0402MF
X
3 mA
Standard
TO202-3
Z0402SF
X
3 mA
Standard
TO202-3
Z0402NF
X
3 mA
Standard
TO202-3
Z0405MF
X
5 mA
Standard
TO202-3
Z0405SF
X
5 mA
Standard
TO202-3
Z0405NF
X
5 mA
Standard
TO202-3
Z0409MF
X
10 mA
Standard
TO202-3
Z0409SF
X
10 mA
Standard
TO202-3
Z0409NF
X
10 mA
Standard
TO202-3
Z0410MF
X
25 mA
Standard
TO202-3
Z0410SF
X
25 mA
Standard
TO202-3
Z0410NF
X
25 mA
Standard
TO202-3
Part Number
Marking
Weight
Base
quantity
Packing
mode
Z04xxyF 0AA2
Z04xxyF
0.8 g
50
Tube
Z04xxyF 1AA2
Z04xxyF
0.8 g
250
Bulk
Z 04 02 M F 0AA2
TRIAC
SERIES
CURRENT: 4A
SENSITIVITY:
02: 3mA
05: 5mA
09: 10mA
10: 25mA
VOLTAGE:
M: 600V
S: 700V
N: 800V
PACKAGE:
F: TO202-3
PACKING MODE:
0AA2: Tube
1AA2: Bulk
Blank
Z04 Series
4/6
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
Fig. 2: RMS on-state current versus ambient
temperature (full cycle).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of It.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
6
7
IT(RMS)(A)
P(W)
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
IT(RMS)(A)
Rth(j-a)=Rth(j-l)
Rth(j-a)=100C/W
Tamb(C)
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
1E-3
1E-2
1E-1
1E+0
tp(s)
K=[Zth(j-a)/Rth(j-a)]
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
Tj(C)
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25C]
IGT
IH & IL
1
10
100
1000
0
5
10
15
20
25
Number of cycles
ITSM(A)
Non repetitive
Tj initial=25C
Repetitive
Tamb=25C
One cycle
t=20ms
0.01
0.10
1.00
10.00
1
10
100
500
tp (ms)
ITSM (A), It (As)
Tj initial=25C
ITSM
It
dI/dt limitation:
20A/s
Z04 Series
5/6
Fig. 7: On-state characteristics (maximum
values).
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.1
1.0
10.0
20.0
VTM(V)
ITM(A)
Tj=25C
Tj max.
Vto= 0.95 V
Rd= 180 mW
Tj=Tj max.
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
(dV/dt)c (V/s)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
Z0402
Z0405
Z0409
Z0410
0
25
50
75
100
125
0
1
2
3
4
5
6
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
Tj (C)
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